View IRF7F3704_9001173.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 12* i d @ v gs = 10v, t c = 100c continuous drain current 12* i dm pulsed drain current 48 p d @ t c = 25c max. power dissipation 20 w linear derating factor 0.16 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy 190 mj i ar avalanche current 12 a e ar repetitive avalanche energy 2.0 mj dv/dt peak d iode recovery dv/dt 0.5 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in./1.6mm from case for 10s) weight 0.98 (typical) g o c a www.irf.com 1 product summary part number bv dss r ds(on) i d IRF7F3704 20v 0.035 ? 12a*

hexfet ? power mosfet IRF7F3704 thru-hole (to-39) 20v, n-channel seventh generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. these devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.

to-39 features: low r ds(on) avalanche energy ratings dynamic dv/dt rating simple drive requirements ease of paralleling hermetically sealed light weight pd-94340b
IRF7F3704 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 20 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.024 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.035 ? v gs = 10v, i d = 12a resistance ? ? 0.04 v gs = 4.5v, i d = 12a v gs(th) gate threshold voltage 1.0 ? 3.0 v v ds = v gs , i d = 250 a g fs forward transconductance 20 ? ? s ( )v ds =10v, i ds = 12a i dss zero gate voltage drain current ? ? 20 v ds = 20v ,v gs =0v ? ? 100 v ds = 16v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 16v i gss gate-to-source leakage reverse ? ? -100 v gs = -16v q g total gate charge ? ? 19 v gs =4.5v, i d = 12a q gs gate-to-source charge ? ? 8.0 nc v ds = 10v q gd gate-to-drain (?miller?) charge ? ? 6.0 t d (on) turn-on delay time ? ? 30 v dd = 10v, i d = 12a, t r rise time ? ? 175 v gs = 4.5v, r g = 1.8 ? t d (off) turn-off delay time ? ? 175 t f fall time ? ? 100 l s + l d total inductance ? 7.0 ? measured from drain lead (6mm/ l 0.25in. from package) to source lead (6mm/0.25in. from package) c iss input capacitance ? 1860 ? v gs = 0v, v ds = 10v c oss output capacitance ? 990 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 55 ? na ? nh ns a note: corresponding spice and saber models are available on international rectifier website.

source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 12* i sm pulse source current (body diode) ?? 48 v sd diode forward voltage ? ? 1.3 v t j = 25c, i s = 12a, v gs = 0v t rr reverse recovery time ? ? 57 ns t j = 25c, i f = 12a, di/dt 100a/ s q rr reverse recovery charge ? ? 60 nc v dd 16v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a

thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 6.25 r thja junction-to-ambient ? ? 175

c/w
www.irf.com 3 IRF7F3704 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20s pulse width tj = 25c vgs top 10.0v 9.0v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 3.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.5v 20s pulse width tj = 150c vgs top 10.0v 9.00v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 3.5v 10 100 3.5 4.0 4.5 5.0 5.5 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 12a
IRF7F3704 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 400 800 1200 1600 2000 2400 2800 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 10 20 30 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 12a v = 10v ds v = 16v ds 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
www.irf.com 5 IRF7F3704 fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature

1 0.1 % !"!! + - v gs v ds 90% 10% v gs t d(on) t r t d(off) t f 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 4 8 12 16 20 t , case temperature ( c) i , drain current (a) c d limited by package
IRF7F3704 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs t p v (br)dss i as d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.4a 7.6a 12a
www.irf.com 7 IRF7F3704 repetitive rating; pulse width limited by maximum junction temperature. i sd 12a, di/dt 80a/ s, v dd 20v, t j 150c pulse width 300 s; duty cycle 2% v dd = 15 v, starting t j = 25c, l= 2.7 peak i as =12a, v gs = 10v, r g = ? footnotes: case outline and dimensions ? to-205af (modified to-39)
ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2005

▲Up To Search▲

Price & Availability of IRF7F3704

	To Download IRF7F3704 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .